While silicon continues to reign as the dominant semiconductor in today's electronics landscape, Gallium Nitride (GaN) has achieved remarkable commercial success across various sectors, including lighting, microwave electronics, and power electronics. Nevertheless, the full potential of GaN electronics may transcend current accomplishments, positioning it as the pivotal semiconductor technology for our electrified future. This seminar will delve into the ongoing research endeavors at the speaker’s group, with a focus on GaN super-heterojunction devices and integration. Our objective is to propel GaN electronics to new heights in terms of power, speed, and harsh environment survivability.