Education
University of Science and Technology of China (USTC) (B.S., Physics), 1996
Columbia University (Ph.D., Physics), 2003
Honors and Awards
NSF CAREER Award 2008-2013
Fellow of the American Physical Society
Selected Publications
- J. Li, R. Zhang, Z. Yin, J. Zhang, K. Watanabe, T. Taniguchi, C. Liu, J. Zhu, “A valley valve and electron beam splitter", Science 362, 1149 (2018)
- Jing Li, Hua Wen, Kenji Watanabe, Takashi Taniguchi, Jun Zhu, “”Gate-controlled transmission of quantum Hall edge states in bilayer graphene, Physical Review Letters, 120, 057701 (2018)
- Jing Li, Yevhen Tupikov, Kenji Watanabe, Takashi Taniguchi, Jun Zhu, “Effective Landau level diagram of bilayer graphene”, Physical Review Letters, 120, 047701 (2018)
- J. Li, K. Wang, K. J. McFaul, Z. Zern, Y. F. Ren, K. Watanabe, T. Taniguchi, Z. H. Qiao, J. Zhu, “Gate-controlled topological conducting channels in bilayer graphene”, Nature Nanotechnology, 11, 1060 (2016)
- Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu, “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states”, Appl. Phys. Lett. 106, 152104 (2015)
- K. Zou, F. Zhang, C. Clapp, A.H. MacDonald and J. Zhu, “Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field”, Nano Lett., 13, 369 (2013)
- X. Hong, K. Zou, B. Wang, S.-H. Cheng and J. Zhu, “Evidence for spin-flip scattering and local moments in dilute fluorinated graphene”, Phys. Rev. Lett. 108, 226602 (2012)
- K. Zou, X. Hong and J. Zhu, “Effective mass of electrons and holes in bilayer graphene: electron-hole asymmetry and electron-electron interaction”, Phys. Rev. B 84, 085408 (2011)
- X. Hong, S.-H. Cheng, C. Herding and J. Zhu, “Colossal negative magnetoresistance in dilute fluorinated graphene”, Phys. Rev. B 83, 085410 (2011)
- K. Zou, and J. Zhu, “Transport in gapped bilayer graphene: The role of potential fluctuations”, Phys. Rev. B 82, 081407 (R) (2010)
- K. Zou, X. Hong, D. Keefer, and J. Zhu, “The deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering”, Phys. Rev. Lett. 105, 126601 (2010)
- S. Cheng, K. Zou, F. Okino, H.R. Gutierrez, A. Gupta, N. Shen, P. Eklund, J.O. Sofo, and J. Zhu, “Reversible fluorination of graphene: evidence of a two-dimensional wide band gap semiconductor”, Phys. Rev. B 81, 205435 (2010)
- X. Hong, A. Posadas, K. Zou, C. H. Ahn and J. Zhu, “High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides”, Phys. Rev. Lett. 102, 136808 (2009)
- J. Zhu, Markus Brink, and Paul L. McEuen, “Single-Electron Force Readout of Nanoparticle Electrometers Attached to Carbon Nanotubes”, Nano Lett., 8, 2399 (2008)
- J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W Baldwin and K. W. West, “Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System”, Phys. Rev. Lett, 90, 056803 (2003)
- J. Zhu, W. Pan, H. L. Stormer, L. N. Pfeiffer, and K. W. West, “Density-Induced Interchange of Anisotropy Axes at Half-Filled High Landau Levels”, Phys. Rev. Lett. 88, 116803 (2002)
Research Interests
Research in the Zhu lab focuses on the exploration of fundamental and novel electronic properties of low-dimensional materials and nanostructures. Our current research interests include two-dimensional layered materials such as graphene, atomically thin metals, and new van der Waals compounds. We are interested in controlling the interaction, competing electronic degrees of freedom, and the topology of 2D materials to explore emergent quantum phenomena in 1D and 2D systems. We employ van der Waals stacking, interface engineering and advanced nanofabrication techniques to engineer new material structures and device functionalities. We use low-temperature transport and strong magnetic field to investigate the ground state and collective excitations of many-body systems.