Associate Professor of Physics, Cornell university
Adjunct Associate Professor of Physics, Penn State
B.S. Hong Kong University of Science and Technology (2005)
Ph.D. Columbia University (2010)
Honors and Awards
- 2017 Alfred P. Sloan Research Fellowship, 2017-
- 2016 David and Lucile Packard Fellowship
- 2016 AFOSR Young Investigator Program Award
- 2015 DOE Early Career Research Program Award
- 2014 International Union of Pure and Applied Physics Young Scientist Prize in Quantum Electronics
- 2012 Michelson Postdoctoral Prize
1. Z. Wang, J. Shan, and K. F. Mak, "Valley- and spin-polarized Landau levels in monolayer WSe2," Nature Nanotech. doi:10.1038/nnano.2016.213 (2016).
2. X. Xi, H. Berger, L. Forro, J. Shan, and K. F. Mak, "Gate tuning of electronic phase transitions in two-dimensional NbSe2," Phys. Rev. Lett. 117, 106801 (2016).
3. K. F. Mak, and J. Shan, "Photonics and optoelectronics of two-dimensional semiconductor transition metal dichalcogenides," Nature Photon. 10, 216-226 (2016).
4. J. Lee, K. F. Mak, and J. Shan, "Electrical control of the valley Hall effect in bilayer MoS2 transistors," Nature Nanotech. 11, 421-425 (2016).
5. X. Xi, Z. Wang, W. Zhao, J.-H. Park, K. T. Law, H. Berger, L. Forro, J. Shan, and K. F. Mak, "Ising pairing in superconducting NbSe2 atomic layers," Nature Phys. 12, 139-143 (2016).
6. X. Xi, L. Zhao, Z. Wang, H. Berger, L. Forro, J. Shan, and K. F. Mak, "Strongly enhanced charge-density-wave order in monolayer NbSe2," Nature Nanotech. 10, 765-769 (2015).
7. K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489-1492 (2014).
8. K. He, N. Kumar, L. Zhao, Z. Wang, K. F. Mak, H. Zhao and J. Shan, “Tightly bound excitons in monolayer WSe2,” Phys. Rev. Lett. 113, 026803 (2014).
9. K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nature Mater. 12, 207-211 (2013).
10. K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nature Nanotech. 7, 494-498 (2012).
- Electronic properties of two-dimensional materials
- Topological transport, spin and valley dependent phenomena
- Collective quantum phenomena
- Effects of spin-orbit interactions
- Optical properties, excitonic effects and optoelectronic devices